Corrigenda (Corrections)
Only important scientific content errors are listed.
First printing (April 2017)
Corrections to print version only; the e-version is likely to be correct, depending on the date of purchase.
Page 143:
Figure 2.8. The low temperature
residual resistivity value shown is 7x10-5
nΩ m.
This should be 4x10-4
nΩ m.
The
ρ vs
T behavior curves at a higher
ρR.
Page 230:
The wavelength 0.0367 nm in Fig.
3.14(b) and 0.0357 nm in the caption should be 0.0123 nm.
Page 245:
Equation [3.37], delete the term
"(2me/h2)"
before "α"
Page 252:
Photo on bottom right corner of
page, caption should read "An STM image of a silicon crystal surface".
Page 514:
Question 5.15, Figure 5.56."Ga
should have 3 electrons and As should have 5 electrons". (This is correct in the
3rd Edition)
Page 556:
Equation 6.30, next equation and
p557, the equation starting with “slope =”, should have
Nd in the denominator. All
calculations and conclusions are correct. (A typographic error only.)
Page 816:
"decreases" in line 3 below Fig.
8.46 should be "increases" and "increases" in the next line should be
"decreases".