Web-Materials

 
Springer Handbook of Electronic
and Photonic Materials, 2006

About the Editors

Safa Kasap

Safa Kasap is currently a Professor and Canada Research Chair in Electronic Materials and Devices in the Electrical Engineering Department at the University of Saskatchewan, Canada. He obtained his Ph.D. degree from the Imperial College of Science, Technology and Medicine, University of London, specializing in amorphous semiconductors and chalcogenide glasses. In 1996 he was awarded the DSc (Engineering) from London University for his research contributions to materials science in electrical engineering. He is a Fellow of the Institution of Electrical Engineers, the Institute of Physics and the Institute of Materials.

Peter Capper

Peter Capper has spent some 30 years in the infrared industry growing and characterising cadmium mercury telluride (CMT) and other tellerium-based materials. He holds a patent in the bulk growth of CMT, has authored/co-authored over 100 papers and given several invited talks at international crystal grwoth/IR conferences. Dr. Capper is also a Fellow of the Institute of Physics. He has edited/ co-edited 5 books in IR materials and devices and crystal growth. He is now Materials Team Leader at SELEX Sensors and Airborne Systems, Southampton, UK.

List of Selected Authors

  • Sado Adachi, Gunma University, Gunma, Japan
  • Alf Adams, University of Surry, UK
  • Guy Adriaenssens, Kathokieke Universiteit Leuven, Heverlee-Leuven, Belgium
  • Wilford von Ammon, Siltronic AG, Burghausen, Germany
  • Peter Ashburn University of Southampton, UK
  • Mark Auslender, Ben-Gurion University, Beer-Sheva, Israel
  • Darren Bagnall, University of Southampton, UK
  • Ian Baker, SELEX Sensors and Airborne Systems, Southampton, UK
  • Sergei Baranovskii, Philipps University, Malburg, Germany
  • Mark Baxendale, Queen Mary University of London, UK
  • Monica Brinza, Katholieke Univeriteit Leuven, Heverlee-Leuven, Belgium
  • Paul Brown, University of Nottingham, UK
  • Mike Brozel, UMIST, Manchester, UK
  • Peter Capper, SELEX Sensors and Airborne Systems, Southampton, UK
  • Lawrence Comstock, San Jose State University, San Jose, USA
  • Ray DeCorby, University of Alberta, Canada
  • Jamal Deen, McMaster University, Canada
  • Len Dissado, Univeristy of Leicester, UK
  • Lester Eastman, Cornell University, Ithaca, NY, USA
  • Anyd Edgar, Victoria University, Wellington, New Zealand
  • Darrel Frear, Freescale Semiconductor, Tempe, USA
  • Mark Fox, University of Sheffield, UK
  • Brian Foutz, Cornell University, Ithaca, NY, USA
  • Robert Gould, Keele University, UK
  • Aseel Hassan, Sheffield-Halam University, UK
  • Shlomo Hava, Ben-Gurion University, Beer-Sheva Israel
  • Colin Humphrey, University of Cambridge, UK
  • Stuart Irvine, University of Wales, Bangor, UK
  • Radu Ispasoiu, Credence Corporation
  • Minoru Isshiki, Tohoku University, Japan
  • Robert Johanson, University of Saskatchewan, Canada
  • Zahangir, Kabir, Concordia University, Montreal, Canada
  • Safa Kasap, University of Saskatchewan, Canada
  • Alex Kolobov, Institute for Advanced Industrial Science and Technology, Ibaraki, Japan
  • Cyril Koughia, University of Saskatchewan, Canada
  • Geoffrey Luckhurst, Southampton University, UK
  • Arokia Nathan, University of Waterloo, Canada and Cambridge University, UK
  • Winfred Monch, Gerhard-Mercator-Universitat Duisberg, Germany
  • Kazuo Morigaki, Yamaguchi University, Hiroshima, Japan
  • Hadis Morkoc, Virginia Commonwealth University, Richmond, USA
  • Gertrude Newmark, Columbia University, New York, USA
  • Chisato Ogihara, yamaguchi University, Hiroshima, Japan
  • Stephen O'Leary, University of Regina, Canada
  • Fabien Pascal, Univerite de Montpellier, France
  • Mike Petty, University of Durham, UK
  • Asim Ray, Queen Mary London University, Uk
  • John Rowlands, University of Toronto, Canada
  • Harry Ruda, University of Toronto, Canada
  • Kejy Tanaka Keiji, Hokkaido university, Sapporo, Japan
  • Charbel Tannous, universite de Bretagne Occidentale, Brest, Frace
  • Ali Teke, Balikesir University, Turkey
  • Dan Tonchev, University of Saskatchewan, Canada
  • J. Tominaga, Institute for Advanced Industrial Science and Technology, Ibaraki, Japan
  • Harry Tuller, Massachusetts Institute of Technology, Cambridge, USA
  • Ted Sargent, University of Toronto, Canada
  • Peyman Servati, University of Waterloo and University of Cambridge, UK
  • Derek Shaw, University of Hull, UK
  • Michael Shur, Rensselaer Polytechnic Institute Troy, New York, USA
  • Fumio Shimura, Shizuoka Institute of Science and Technology, Shizuoka, Japan
  • Jai Singh, Charles Darwin University, Australia
  • Tim Smeeton, University of Cambridge, UK
  • Stephen Sweeney, University of Surrey, UK
  • David Sykes, Loughborough Surface Analysis Ltd, Leicestershire, UK
  • Robert Wallace, University of Texas, Dallas, USA
  • David Weisss, NexPress Soutions Inc., Rochester, USA
  • Rainer Wesche, CRPP-FT, Paul Scherrer Institute, Switzerland
  • Roger Whatmore, Tyndall National Institute, Cork, Ireland
  • Neil White, Universtiy of Southampton, UK
  • Jan Willekens, katholieke Universiteit Leuven, Hevelee-Leuven, Belgium

  • Table of Contents

  • Perspective on Electronic and Optoelectronic Materials
  • Electrical Conduction in Metals and Semiconductors
  • Optical properties of Electronic Materials: Fundamentals & Characterization
  • Magnetic Properties of Electronic Materials
  • Defects in Monocrystalline Silicon
  • Diffusion in Semiconductors
  • Photoconductivity in Materials Research
  • Electronic Properties of Semiconductor Interfaces
  • Disordered Materials
  • Dielectric Response
  • Ionic Conduction and Applications
  • Bulk crystal growth-methods and materials
  • Single-Crystal Silicon: Growth and Properties
  • Epitaxial Crystal Growth: Methods and Materials
  • Narrow-Bandgap II-VI Semiconductors: Growth and Properties
  • Structural Characterization
  • Surface Chemical Analysis
  • Thermal Properties and Thermal Analysis: Fundamentals, Experimental Techniques and Applications
  • Electrical Characterization of Semiconductors Materials and Devices
  • Single Crystal Silicon: Electrical and Optical Properties
  • Silicon-Germanium: Properties, Growth and Applications
  • High-Temperature Electronic Materials: Silicon Carbide and Diamond
  • Amorphous and Microcrystalline Silicon
  • Ferroelectric Materials
  • Dielectric Materials for Microelectronics
  • Thin Films
  • Thick Films
  • III-V Ternary and Quaternary Compounds
  • Group III Nitrides
  • Electron Transport within the III-V Nitride Semiconductors, GaN, AIN, and InN: Monte Carlo Analysis
  • II-IV Semiconductor for Optoelectronics: CdS, CdSe, CdTe
  • Doping Aspects of Zn-Based Wide-Bandgap Semiconductors for Optoelectronics
  • II-VI Narrow Band-gap
  • Optoelectronic Devices and Materials
  • Liquid Crystals
  • Organic Photoconductors
  • Luminescent Materials
  • Nano-Engineered Tunable Photonic Crystals in the Near-IR and Visible Electromagnetic Spectrum
  • Quantum Wells, Superlattices and Band-gap Engineering
  • Glasses for Photonic Integration
  • Optical Nonlinearity in Photonic Glasses
  • Solar Cells & Photovoltaics
  • Silicon on Mechanically Flexible Substrates
  • Large-Area Electronics
  • Photoconductors for X-Ray Image Detectros
  • Phase-Change Optical Recording (from Basic Principles to Advanced Applications)
  • Carbon Nanotubes & Bucky Materials
  • Magnetic Information-Storage Materials
  • High Temperature Superconductors
  • Molecular Electronics
  • Organic Materials for Chemical Sensing
  • Packaging Materials
  • A McGraw-Hill Book with Web Resources
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    Principles of Electronic Materials and Devices, Third Edition - S. O. Kasap